氮化镓晶片
Free-standing GaN Substrates (Customized size)
生长方法: HVPE,氢化物气相外延,
性能参数Specifications:
|
产品型号Item |
GaN-FS-10 |
GaN-FS-15 |
|
尺寸Dimensions |
10.0mm×10.5mm |
14.0mm×15.0mm |
|
孔洞密度Marco Defect Density |
A Level |
0 cm-2 |
|
B Level |
≤ 2 cm-2 |
|
|
厚度Thickness |
Rank 300 |
300 ± 25 µm |
|
Rank 350 |
350 ± 25 µm |
|
|
Rank 400 |
400 ± 25 µm |
|
|
晶体取向Orientation |
C-axis(0001) ± 0.5° |
|
|
TTV(Total Thickness Variation) |
≤15 µm |
|
|
弯曲度BOW |
≤20 µm |
|
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106 Ω·cm |
|
位错密度Dislocation Density |
Less than 5x106 cm-2 |
|
|
有效面积Useable Surface Area |
> 90% |
|
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
|
|
包装Package |
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
|
性能参数Specifications:
|
产品型号Item |
GaN-FS-N-1.5 |
|||
|
尺寸Dimensions |
Ф 25.4mm ± 0.5mm |
Ф 38.1mm ± 0.5mm |
Ф 45.0mm ± 0.5mm |
|
|
孔洞密度Marco Defect Density |
LD Level |
> 90% |
||
|
LED Level |
> 78% |
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|
厚度 Thickness |
300 ± 25 µm |
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|
晶体取向Orientation |
C-axis(0001) ± 0.5° |
|||
|
主定位边Orientation Flat |
(1-100) ± 0.5°, 12 ± 1mm |
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|
次定位边Secondary Orientation Flat |
(11-20) ± 3°, 6 ± 1mm |
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|
TTV(Total Thickness Variation) |
≤15 µm |
|||
|
弯曲度BOW |
≤20 µm |
|||
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
||
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106 Ω·cm |
||
|
位错密度Dislocation Density |
Less than 5x106 cm-2 |
|||
|
有效面积Useable Surface Area |
> 90% |
|||
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
|||
|
包装Package |
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
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